Isolation spacer for thin SOI devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S347000, C257S401000, C257S616000, C257S900000, C257SE27112

Reexamination Certificate

active

07358571

ABSTRACT:
A semiconductor device comprises a semiconductor mesa overlying a dielectric layer, a gate stack formed overlying the semiconductor mesa, and an isolation spacer formed surrounding the semiconductor mesa and filling any undercut region at edges of the semiconductor mesa.

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