Isolation region bird's beak suppression

Details Isolation region bird's beak suppression Isolation region bird's beak suppression

2005-10-26

2008-12-16

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S424000, C257SE21546

Reexamination Certificate

active

07465644

ABSTRACT:
A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern exposes a portion of the semiconducting layer. The structure further includes an electrical isolation region formed in the exposed portion of the semiconducting layer, where the isolation region does not substantially encroach a region beneath the layer of aluminum oxide.

REFERENCES:
patent: 6468865 (2002-10-01), Yang et al.
patent: 7202128 (2007-04-01), Orimoto et al.
patent: 2006/0035418 (2006-02-01), Yoshida et al.

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