Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S510000, C257SE31053
Reexamination Certificate
active
07091536
ABSTRACT:
A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is formed by conducting a plurality of deep implants at different energies and doping levels below the isolation region. The deep implants reduce surface leakage and dark current and increase the capacitance of the photodiode by acting as a reflective barrier to electrons generated by light in the doped region of the second conductivity type of the photodiode.
REFERENCES:
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6423993 (2002-07-01), Suzuki et al.
patent: 6569700 (2003-05-01), Yang
patent: 6590271 (2003-07-01), Liu et al.
Mouli Chandra
Rhodes Howard
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Quach T. N.
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