Isolation method of semiconductor device

Details Isolation method of semiconductor device Isolation method of semiconductor device

1996-01-25

1998-03-17

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438426, 438296, 438297, H01L 2176

Patent

active

057286205

ABSTRACT:
A device isolation method divides a semiconductor substrate into active and inactive regions. A first device isolation layer is formed in a first inactive region using a trench isolation method. Then, local oxidation is used to form a second device isolation layer in a second inactive region which is wider than the first. A dishing phenomenon (generated during CMP processing) is eliminated, and proper device isolation is realized without exposing the active region.

REFERENCES:
patent: 4892614 (1990-01-01), Chapman et al.
patent: 4980311 (1990-12-01), Namose
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 5116779 (1992-05-01), Iguchi
patent: 5130268 (1992-07-01), Liou et al.

Affiliated with

Also associated with

Rating

Isolation method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957221