Isolation method of semiconductor device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

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438426, 438296, 438297, H01L 2176

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active

057286205

ABSTRACT:
A device isolation method divides a semiconductor substrate into active and inactive regions. A first device isolation layer is formed in a first inactive region using a trench isolation method. Then, local oxidation is used to form a second device isolation layer in a second inactive region which is wider than the first. A dishing phenomenon (generated during CMP processing) is eliminated, and proper device isolation is realized without exposing the active region.

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patent: 4994406 (1991-02-01), Vasquez et al.
patent: 5116779 (1992-05-01), Iguchi
patent: 5130268 (1992-07-01), Liou et al.

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