Isolation formation process with active area protection

Details Isolation formation process with active area protection Isolation formation process with active area protection

1987-01-02

1988-03-08

Powell, William A.

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

156653, 156657, 1566591, 1566611, 156648, 437226, 437227, B44C 122, C03C 1500, C03C 2506

Patent

active

047298162

ABSTRACT:
An isolation formation process that minimizes bird's beak encroachment and preserves gate oxide integrity in the active region. Future active areas are protected by a structure having a central protective material layer, such as a thermal oxide, surrounded by a ring of thermal nitride. The thermal nitride and central protective material are coated by active region protection masking covers. In one embodiment, the masking covers include sidewalls over the thermal nitride ring. In another embodiment, the central protective material layer is overetched beneath an undercut covering layer to provide an undercut filled by the sidewall. All of these features contribute to bird's beak encroachment prevention which may be narrowed to as little as 0.07 microns per side.

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J. Hui, et al. "Selective Oxidation Technologies for High Density MOS," IEEE Electron Device Letters, vol. EDL-2, No. 10, Oct. 1981, pp. 244-247.
J. Hui, et al. "Electrical Properties of MOS Devices made with SILO Technology," Proceedings of IEDM, 1982, pp. 220-223.

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