Isolation for transistor devices having a pilot structure

Details Isolation for transistor devices having a pilot structure Isolation for transistor devices having a pilot structure

1987-03-31

1989-08-22

James, Andrew J.

357 234, 357 41, 357 43, 357 47, 357 52, H01L 2978, H01L 2702, H01L 2704

Patent

active

048600806

ABSTRACT:
An isolation structure for isolating a pilot device from the main device of a monolithic semiconductor device. The isolation structure comprises a pair of spaced isolation channels separating the pilot device from the main device. An electrode insulatively disposed over the region between the two isolation channels is shorted by a metallization layer to the isolation channel closest to the pilot device. In this manner, parasitic transistor turn on of the isolation structure is prevented.

REFERENCES:
patent: 3878551 (1975-04-01), Callahan, Jr.
patent: 4117507 (1978-09-01), Pacor
patent: 4402003 (1983-08-01), Blanchard
patent: 4509067 (1985-04-01), Minami et al.
patent: 4520448 (1985-05-01), Tremintin
patent: 4618872 (1986-10-01), Baliga

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