Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S623000, C257S500000, C257S501000, C257S506000, C257S524000
Reexamination Certificate
active
06879000
ABSTRACT:
A semiconductor-on-insulator chip is provided which includes a substrate that is formed of an electrically insulating material; a semiconducting layer overlying the substrate; a first region in the semiconducting layer that has a first thickness, the first region includes silicon regions defined by a shallow trench isolation; and a second region in the semiconducting layer that has a second thickness, the second region includes active regions defined by mesa isolation.
REFERENCES:
patent: 5973358 (1999-10-01), Kishi
patent: 6060748 (2000-05-01), Uchida et al.
patent: 6114197 (2000-09-01), Hsu
patent: 6448114 (2002-09-01), An et al.
patent: 6548369 (2003-04-01), van Bentum
Flynn Nathan J.
Forde Remmon R.
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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