Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-31
2011-12-06
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29304, C257SE21206, C257SE21545, C438S266000
Reexamination Certificate
active
08072023
ABSTRACT:
A memory device including a plurality of storage regions arranged with storage region intervals. A plurality of conductor lines are juxtaposed the storage region intervals. One or more isolations are provided, each isolation adjacent one or more conductor lines and juxtaposed one or more of the storage regions that are dummy storage regions. The storage regions are charge storage regions in memory cells and each memory cell further includes a first cell region, a second cell region and a cell channel juxtaposed the charge storage region and located between the first cell region and the second cell region. A first array region and a second array region are separated by a first one of the isolations; each array region includes one or more groups of the memory cells where each memory cell includes one of the storage regions.
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Fahmy Wael
Ingham John C
Marvell International Ltd.
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