Isolation film of semiconductor device and method for fabricatin

Details Isolation film of semiconductor device and method for fabricatin Isolation film of semiconductor device and method for fabricatin

1998-04-09

2000-07-18

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438407, 438423, 438410, 438439, 438449, 438450, 438769, 438770, H01L 2176, H01L 2131

Patent

active

060906820

ABSTRACT:
Disclosed are an isolation film of a semiconductor device and a method for fabricating the same, which prevent the isolation film from being damaged due to misalignment when forming a contact hole in a region adjacent to the isolation film, to ensure stable effective isolation distance. The isolation film of a semiconductor device includes a semiconductor substrate, a lower isolation film formed in the semiconductor substrate, and an upper isolation film formed on the lower isolation film, with a material having etching selectivity different from the lower isolation film.

REFERENCES:
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5821153 (1998-10-01), Tsai et al.
S. Wolf, "Silicon Processing for the VLSI Era", vol. 2, pp. 17-27.

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