Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-08-14
2007-08-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S149000, C365S063000, C257S906000
Reexamination Certificate
active
11358234
ABSTRACT:
A memory device includes isolation devices located between-memory cells. A plurality of isolation lines connects the isolation devices to a positive voltage during normal operations but still keeps the isolation devices in the off state to provide isolation between the memory cells. A current control circuit is placed between the isolation lines and a power node for reducing a current flowing between the isolation lines and the power node in case a deflect occurs at any one of isolation devices.
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Graham Scot M.
Howell Steven E.
Porter Stephen R.
Tran Luan C.
Le Toan
Micro)n Technology, Inc.
Phung Anh
Schwegman Lundberg Woessner & Kluth P.A.
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