Isolating method and transferring method for semiconductor...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S456000, C438S457000, C257S079000

Reexamination Certificate

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07049207

ABSTRACT:
A method of isolating semiconductor devices by wet etching of a semiconductor laminate structure formed on a substrate includes providing an etching stop layer having at least two layers between the substrate and the semiconductor laminate structure. The semiconductor laminate structure is etched to isolate the semiconductor devices, the substrate is then etched away, followed by sequentially etching away of the etching stop layer.

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patent: 2003/0092212 (2003-05-01), Buchanan et al.
patent: 10042947 (2002-03-01), None

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