Isolated tungsten microelectromechanical structures

Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428210, 310 40MM, 310309, B32B 900

Patent

active

053994159

ABSTRACT:
A process for fabricating mechanically interconnected, released, electrically isolated metal microstructures, and circuit components and actuators produced by the process. A dielectric stack on a substrate is patterned and etched to produce trenches in which a metal such as tungsten is deposited. The dielectric is removed from selected regions of the metal to expose metal beams, and to form mechanically interconnecting, electrically insulating hinges supporting the beams. The beams and hinges are then released for relative motion. Electrical potentials may be established between adjacent beams to produce controlled motion.

REFERENCES:
patent: 4437226 (1984-03-01), Soclof
patent: 4668865 (1987-05-01), Gimzewski et al.
patent: 4706374 (1987-11-01), Murakami
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4772928 (1988-09-01), Dietrich et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 5015906 (1991-05-01), Cho
patent: 5045152 (1991-09-01), Sickafus
patent: 5070317 (1991-12-01), Bhagat
patent: 5072288 (1991-12-01), MacDonald
patent: 5126812 (1992-06-01), Greiff
patent: 5179499 (1993-01-01), MacDonald
patent: 5206557 (1993-04-01), Bobbio
Wilson, Stoll and Calacone, "Highly Selective, High Rate Tungsten Deposition", 1985, pp. 35-42.
Zhang et al., "An RIE Process for Submicron, Silicon Electromechanical Structures", 1991, pp. 520-523.
Moriya et al., "A Planar Metallization Process--Its Application to . . . ", Jul. 1983, pp. 550-553.
Arney et al., "Formation of Submicron Silicon-on-Insulator . . . ", J. Vac. Sci. Technol. B 6(1), Jan./Feb. 1988, pp. 341-345.
Wilson et al., "Highly Sensitive, High Rate Tungsten Deposition", Materials Research Society, 1985, pp. 35-42.
Zhang et al., "A RIE Process for Submicron, Silicon Electromechanical Structures", J. Micromech. Microen. 2 (1992) 31-38.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Isolated tungsten microelectromechanical structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolated tungsten microelectromechanical structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolated tungsten microelectromechanical structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1147864

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.