Isolated transistor

Details Isolated transistor Isolated transistor

2008-02-27

2010-02-23

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256, C257SE29258, C257SE29261, C257S510000

Reexamination Certificate

active

07667268

ABSTRACT:
Various integrated circuit devices, in particular a transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.

REFERENCES:
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4454647 (1984-06-01), Joy et al.
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 4642883 (1987-02-01), Sakurai et al.
patent: 4655875 (1987-04-01), Wada et al.
patent: 4819052 (1989-04-01), Hutter
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5374569 (1994-12-01), Yilmaz et al.
patent: 5410175 (1995-04-01), Kyomasu et al.
patent: 5420061 (1995-05-01), Manning
patent: 5506431 (1996-04-01), Thomas
patent: 5557135 (1996-09-01), Hashimoto
patent: 5684305 (1997-11-01), Pearce
patent: 5807783 (1998-09-01), Gaul et al.
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5986863 (1999-11-01), Oh
patent: 6130458 (2000-10-01), Takagi et al.
patent: 6331456 (2001-12-01), Wu
patent: 6657262 (2003-12-01), Patti
patent: 6740958 (2004-05-01), Nakazato et al.
patent: 6855985 (2005-02-01), Williams et al.
patent: 6900091 (2005-05-01), Williams et al.
patent: 6943426 (2005-09-01), Williams et al.
patent: 7049663 (2006-05-01), Wang
patent: 7176548 (2007-02-01), Williams et al.
patent: 7268045 (2007-09-01), Hower et al.
patent: 2002/0008299 (2002-01-01), Leonardi
patent: 2002/0084506 (2002-07-01), Voldman et al.
patent: 2003/0168712 (2003-09-01), Shin et al.
patent: 2004/0032005 (2004-02-01), Williams et al.
patent: 2004/0033666 (2004-02-01), Williams et al.
patent: 2005/0014324 (2005-01-01), Williams et al.
patent: 2005/0014329 (2005-01-01), Williams et al.
patent: 2005/0142724 (2005-06-01), Williams et al.
patent: 2005/0142791 (2005-06-01), Williams et al.
patent: 2005/0142792 (2005-06-01), Williams et al.
patent: 2005/0158939 (2005-07-01), Williams et al.
patent: 2005/0272207 (2005-12-01), Williams et al.
patent: 2005/0272230 (2005-12-01), Williams et al.
patent: 2006/0076629 (2006-04-01), Yilmaz
patent: 2006/0223257 (2006-10-01), Williams et al.
patent: 2007/0013021 (2007-01-01), Zhang
patent: 2007/0132056 (2007-06-01), Williams
patent: 2007/0278568 (2007-12-01), Williams et al.
patent: 2007/0278612 (2007-12-01), Williams et al.
patent: 2008/0042232 (2008-02-01), Williams et al.
patent: 2008/0044978 (2008-02-01), Williams et al.
patent: 2008/0048287 (2008-02-01), Williams et al.
patent: 2008/0197408 (2008-08-01), Disney et al.
patent: 2008/0197445 (2008-08-01), Disney et al.
patent: 2008/0197446 (2008-08-01), Disney et al.
patent: 2008/0210980 (2008-09-01), Disney et al.
patent: 2008/0213972 (2008-09-01), Disney et al.
patent: 2008/0217699 (2008-09-01), Disney et al.
patent: 2008/0230812 (2008-09-01), Disney et al.
patent: 2008/0237656 (2008-10-01), Williams et al.
patent: 2008/0237704 (2008-10-01), Williams et al.
patent: 2008/0237706 (2008-10-01), Williams et al.
patent: 2008/0237782 (2008-10-01), Williams et al.
patent: 2008/0237783 (2008-10-01), Williams et al.
patent: 2008/0290449 (2008-11-01), Williams et al.
patent: 2008/0290450 (2008-11-01), Williams et al.
patent: 2008/0290451 (2008-11-01), Williams et al.
patent: 0 589 675 (1994-03-01), None
patent: 1357598 (2003-10-01), None
patent: 2 362 508 (2001-11-01), None
patent: 10-0456691 (2008-11-01), None

Affiliated with

Also associated with

Rating

Isolated transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolated transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolated transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4168592