Isolated power transistor

Details Isolated power transistor Isolated power transistor

1996-08-28

1998-02-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257343, 257344, 257398, 437 59, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057194238

ABSTRACT:
A high current power transistor is provided that comprises a drain region that includes a highly-doped drain region (54) and a lightly-doped drain region (50). The channel region (52) is activated by a gate conductor (32). The channel region separates the lightly-doped drain region (50) from a D-well region (40). A sidewall insulator body (44) is used to form the lightly-doped drain region (50) and the lightly-doped drain region (54). The transistor is formed in an active region (20) which comprises a portion of an n-type epitaxial layer (12) formed outwardly from a p-type substrate (10). The isolation structures (14) and (16) as well as the epitaxial layer (12) provides for a transistor that can be used in both source follower and common source configurations.

REFERENCES:
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5502323 (1996-03-01), Kitamura et al.
patent: 5585660 (1996-12-01), Mei
patent: 5633525 (1997-05-01), Kitamura et al.

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