Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-16
1999-01-26
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257520, 257640, 257649, H01L 27108
Patent
active
058641564
ABSTRACT:
A method for preparing an SRAM or DRAM structure on a substrate with an oppositely doped well therein, a field oxide region extending above and between the well and the substrate, first and second N-MOS transistors on the silicon substrate, and a P-MOS transistor on the silicon well. The source and drain regions of each of the P-MOS transistor and the first and second N-MOS transistors each have a polysilicon plug making contact therewith. Each polysilicon plug is isolated one from another by nitride spacers, has the same doping as the region with which it makes contact, and is self-aligned to the nitride spacers lining the passage of the polysilicon plugs to their respective contacts on either the silicon substrate or the silicon well. The self-aligned nature of the polysilicon plugs is due to the nitride spacers formed by etchant selectivities and photoresist masks.
REFERENCES:
patent: 5346844 (1994-09-01), Cho et al.
patent: 5387533 (1995-02-01), Kim
patent: 5489546 (1996-02-01), Ahmad et al.
patent: 5565372 (1996-10-01), Kim
patent: 5597746 (1997-01-01), Prall
patent: 5786250 (1998-07-01), Wu et al.
Crane Sara
Micro)n Technology, Inc.
LandOfFree
Isolated plugged contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Isolated plugged contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolated plugged contacts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1452300