Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000
Reexamination Certificate
active
06903421
ABSTRACT:
The isolated high-voltage LDMOS transistor according to the present invention includes a split N-well and P-well in the extended drain region. The P-well is split in the extended drain region of the N-well to form a split junction-field in the N-well. The split N-well and P-well deplete the drift region, which shifts the electric field maximum into the bulk of the N-well. This achieves a higher breakdown voltage and allows the N-well to have a higher doping density. Furthermore, the LDMOS transistor according to the present invention includes a N-well embedded beneath the source diffusion region. This creates a low-impedance path for the source region, which restricts the transistor current flow between the drain region and the source region.
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Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
J.C. Patents
Pham Long
System General Corp.
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