Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Reexamination Certificate
2007-03-13
2007-03-13
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
C257S311000, C257S479000
Reexamination Certificate
active
10710821
ABSTRACT:
The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential doped portion in the semiconducting regions underlying an upper Si-containing surface of the semiconducting regions; forming a trench in the substrate including the semiconducting regions and the insulating regions; removing the etch differential doped portion from the semiconductor regions to produce a cavity underlying the upper surface of the semiconducting regions; and filling the trench with a trench dielectric, wherein the trench dielectric material encloses the cavity underlying the upper Si-containing surface of the semiconducting regions. The upper Si-containing surface of the semiconducting regions has a uniform thickness of less than about 100 Å.
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M.Q. Huda, et al., “Technique for Large Elevation of Source/Drain Using Implantation Mediated Selective Etching”,Electrochemical and Solid-State Letters, pp. G117-G118 (2003).
Breitwisch Matthew J.
Lam Chung H.
Mann Randy W.
Martin Dale W.
International Business Machines - Corporation
Owens Douglas W.
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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