ISFET using PbTiO 3 as sensing film

Details ISFET using PbTiO 3 as sensing film ISFET using PbTiO 3 as sensing film

2007-03-13

2007-03-13

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C438S003000, C438S197000

Reexamination Certificate

active

10778285

ABSTRACT:
A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3thin film as H+-sensing film, and a method of forming the same. The PbTiO3thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

REFERENCES:
patent: 6784473 (2004-08-01), Sakai et al.
patent: 2002/0195683 (2002-12-01), Kim et al.
patent: 2003/0201435 (2003-10-01), Suzawa

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