Irradiation method of laser beam

Details Irradiation method of laser beam Irradiation method of laser beam

2006-11-14

2006-11-14

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S150000, C257SE21101, C257SE21134

Reexamination Certificate

active

07135389

ABSTRACT:
A laser irradiation method using a laser crystallization method which can heighten an efficiency of substrate processing as compared to a conventional one and also heighten mobility of a semiconductor film is provided. It is an irradiation method of a laser beam in which, pattern information of a sub-island formed on a substrate is stored, and a beam spot of a laser beam is condensed so as to become linear, and by use of the stored pattern information, a scanning path of the beam spot is determined so as to include the sub-island, and by moving the beam spot along the scanning path, the laser beam is irradiated to the sub-island, characterized in that on the occasion of scanning the beam spot, when the beam spot has reached to the sub-island, the beam spot and the sub-island are contacted at a plurality of points.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4388145 (1983-06-01), Hawkins et al.
patent: 4658135 (1987-04-01), Allman et al.
patent: 4780590 (1988-10-01), Griner et al.
patent: 5225886 (1993-07-01), Koizumi et al.
patent: 5304357 (1994-04-01), Sato et al.
patent: 5632915 (1997-05-01), Schnetzer et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5708252 (1998-01-01), Shinohara et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6449123 (2002-09-01), Tsujimoto et al.
patent: 6469729 (2002-10-01), Ryan
patent: 6563077 (2003-05-01), Im
patent: 6657154 (2003-12-01), Tanabe et al.
patent: 6677222 (2004-01-01), Mishima et al.
patent: 6700096 (2004-03-01), Yamazaki et al.
patent: 6861614 (2005-03-01), Tanabe et al.
patent: 2001/0038127 (2001-11-01), Yamazaki et al.
patent: 2002/0058399 (2002-05-01), Sato et al.
patent: 2003/0148565 (2003-08-01), Yamanaka
patent: 2003/0148594 (2003-08-01), Yamazaki et al.
patent: 2003/0153182 (2003-08-01), Yamazaki et al.
patent: 2003/0153999 (2003-08-01), Miyanaga et al.
patent: 2003/0171837 (2003-09-01), Yamazaki et al.
patent: 2003/0215973 (2003-11-01), Yamazaki et al.
patent: 2003/0228723 (2003-12-01), Yamazaki et al.
patent: 2003/0234395 (2003-12-01), Kokubo et al.
patent: 2003/0235971 (2003-12-01), Yamazaki et al.
patent: 2004/0132266 (2004-07-01), Yamazaki et al.
patent: 88004 (1983-09-01), None
patent: 60161396 (1985-08-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-078329 (1996-03-01), None
patent: 09-270393 (1997-10-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-354463 (1999-12-01), None
Akito Hara et al., “High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization” 2001 IEDM 01, pp. 747-750.
U.S. Appl. No. 10/289,219, filed Nov. 7, 2002, (“Laser Apparatus, Laser Irradiation Method, Manufacturing Method for Semiconductor Device, Semiconductor Device, Production System for Semiconductor Device Using the Laser Apparatus and Electronic Equipment”) (740756-2547) (Full Translation).
U.S. Appl. No. 10/279,960, filed Oct. 25, 2002 (“Laser Apparatus, Laser Irradiation Method, Manufacturing Method for Semiconductor Device, Semiconductor Device, Production System for Semiconductor Device Using the Laser Apparatus and Electronic Equipment”) (Specification, Claims and Drawings).
U.S. Appl. No. 10/289,219, filed Nov. 7, 2002, (“Laser Apparatus, Laser Irradiation Method, Manufacturing Method for Semiconductor Device, Semiconductor Device, Production System for Semiconductor Device Using the Laser Apparatus and Electronic Equipment”) (English Translation Not Available).
U.S. Appl. No. 10/300,927, filed Nov. 21, 2002 (“A Semiconductor Fabricating Apparatus”) (Specification, Claims and Drawings).
U.S. Appl. No. 10/305,367, filed Nov. 27, 2002 (“Laser Irradiation Apparatus”) (Specification, Claims and Drawings).
U.S. Appl. No. 10/321,841, filed Dec. 19, 2002 (“Semiconductor Device and Method of Manufacturing the Same”) (Specification, Claims and Drawings).

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