Iridium oxide local interconnect

Details Iridium oxide local interconnect Iridium oxide local interconnect

1996-03-20

1998-11-17

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, 257763, H01L 2978, G11C 1122

Patent

active

058386050

ABSTRACT:
An iridium oxide local interconnect method for a ferroelectric memory cell includes the steps of forming a conductive layer that extends from a source/drain contact of the transistor proximate to an electrode contact of the ferroelectric capacitor and forming an iridium oxide local interconnect extending from the source/drain contact of the transistor to the electrode contact of the ferroelectric capacitor. The conductive layer is laterally terminated not less than one-half micron from the electrode contact of the ferroelectric capacitor. The conductive layer can include an upper iridium layer and a bottom titanium nitride layer, or can include a single layer of completely reacted titanium nitride. After the local interconnect is formed a top oxide layer is deposited. A late recovery anneal is then performed in oxygen at an elevated temperature to rejuvenate the electrical characteristics of the ferroelectric capacitor. Finally, a bit line contact is opened and metalized.

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