Ionized PVD source to produce uniform low-particle deposition

Details Ionized PVD source to produce uniform low-particle deposition Ionized PVD source to produce uniform low-particle deposition

1997-01-14

2000-03-28

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429806, 20429819, 2042982, 20429817, 20429818, C23C 1434

Patent

active

06042706&

ABSTRACT:
The present invention generally provides a target structure that allows uniform erosion and efficient utilization of a sputterable material while reducing particle generation caused by backscatter deposition. The target has an annular region comprised of sputterable material and a central region configured to receive direct deposition rather than backscatter deposition. The annular region of the target provides an exposed surface that is generally concave, but is preferably substantially frustoconical. The central region of the target provides an exposed surface having a configuration that is either substantially planar or convex, but is preferably substantially convex frustoconical.

REFERENCES:
patent: 3654110 (1972-04-01), Kraus
patent: 3669871 (1972-06-01), Elmgren et al.
patent: 3988232 (1976-10-01), Wasa et al.
patent: 4100055 (1978-07-01), Rainey
patent: 4394236 (1983-07-01), Robinson
patent: 4457825 (1984-07-01), Lamont, Jr.
patent: 4547279 (1985-10-01), Kiyota et al.
patent: 4622121 (1986-11-01), Wegmann et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4673480 (1987-06-01), Lamont, Jr.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4747926 (1988-05-01), Shimizu et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4957605 (1990-09-01), Hurwitt et al.
patent: 5174880 (1992-12-01), Bourez et al.
patent: 5194131 (1993-03-01), Anderson
patent: 5242566 (1993-09-01), Parker
patent: 5320728 (1994-06-01), Tepman
patent: 5366607 (1994-11-01), Lal et al.
patent: 5556525 (1996-09-01), Krivokapic et al.
patent: 5753090 (1998-05-01), Obinata

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