Ionized physical vapor deposition (iPVD) process

Details Ionized physical vapor deposition (iPVD) process Ionized physical vapor deposition (iPVD) process

2011-03-08

2011-03-08

McDonald, Rodney G (Department: 1724)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192120, C204S192170, C204S192320, C438S580000, C438S653000, C438S656000, C438S685000, C438S686000, C438S687000

Reexamination Certificate

active

07901545

ABSTRACT:
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

REFERENCES:
patent: 6051114 (2000-04-01), Yao et al.
patent: 6255187 (2001-07-01), Horii
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6287435 (2001-09-01), Drewery et al.
patent: 6444099 (2002-09-01), Sasaki et al.
patent: 6642146 (2003-11-01), Rozbicki et al.
patent: 7642201 (2010-01-01), Cerio et al.
patent: 2003/0034244 (2003-02-01), Yasar et al.
patent: 09-036040 (1997-02-01), None
Machine Translation of 09-036040 dated Feb. 1997.

Affiliated with

Also associated with

Rating

Ionized physical vapor deposition (iPVD) process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ionized physical vapor deposition (iPVD) process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ionized physical vapor deposition (iPVD) process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2707125