Ionized cluster beam deposition of sapphire and silicon layers

Details Ionized cluster beam deposition of sapphire and silicon layers Ionized cluster beam deposition of sapphire and silicon layers

1992-10-02

1995-01-10

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437235, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053806832

ABSTRACT:
Sapphire, a highly stable oxide of aluminum having the chemical formula of Al.sub.2 O.sub.3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10.sup.-5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate of silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.

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