Ion sources, systems and methods

Radiant energy – Ion generation – Field ionization type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S42300F, C250S424000, C250S42300F, C250S426000, C250S492210, C250S492200

Reexamination Certificate

active

07485873

ABSTRACT:
Ion sources, systems and methods are disclosed.

REFERENCES:
patent: 2893624 (1959-07-01), Fricke
patent: 3121155 (1964-02-01), Berry
patent: 3602710 (1971-08-01), Mueller
patent: 3868507 (1975-02-01), Panitz
patent: 4044255 (1977-08-01), Krisch et al.
patent: 4139773 (1979-02-01), Swanson
patent: 4236073 (1980-11-01), Martin
patent: 4255661 (1981-03-01), Liebl
patent: 4352985 (1982-10-01), Martin
patent: 4451737 (1984-05-01), Isakozawa
patent: 4467240 (1984-08-01), Futamoto et al.
patent: 4633084 (1986-12-01), Gruen et al.
patent: 4639307 (1987-01-01), Goodrich
patent: 4649316 (1987-03-01), Cleaver et al.
patent: 4721878 (1988-01-01), Hagiwara et al.
patent: 4785177 (1988-11-01), Besocke
patent: 4874947 (1989-10-01), Ward et al.
patent: 4954711 (1990-09-01), Fink et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 4985634 (1991-01-01), Stengl et al.
patent: 5034612 (1991-07-01), Ward et al.
patent: 5063294 (1991-11-01), Kawata et al.
patent: 5083033 (1992-01-01), Komano et al.
patent: 5151594 (1992-09-01), McClelland
patent: 5188705 (1993-02-01), Swanson et al.
patent: 5324950 (1994-06-01), Otaka et al.
patent: 5414261 (1995-05-01), Ellisman et al.
patent: 5574280 (1996-11-01), Fujii et al.
patent: 5750990 (1998-05-01), Mizuno et al.
patent: 5783830 (1998-07-01), Hirose et al.
patent: 5976390 (1999-11-01), Muramatsu
patent: 6028953 (2000-02-01), Nakamura et al.
patent: 6042738 (2000-03-01), Casey et al.
patent: 6211527 (2001-04-01), Chandler
patent: 6268608 (2001-07-01), Chandler
patent: 6354438 (2002-03-01), Lee et al.
patent: 6395347 (2002-05-01), Adachi et al.
patent: 6414307 (2002-07-01), Gerlach et al.
patent: 6504151 (2003-01-01), Mitchell et al.
patent: 6538254 (2003-03-01), Tomimatsu et al.
patent: 6579665 (2003-06-01), Lee et al.
patent: 6581023 (2003-06-01), Kim
patent: 6700122 (2004-03-01), Matsui et al.
patent: 6753535 (2004-06-01), Rose
patent: 6791084 (2004-09-01), Shimoma et al.
patent: 6822245 (2004-11-01), Muto et al.
patent: 6875981 (2005-04-01), Nishikawa
patent: 7084399 (2006-08-01), Muto et al.
patent: 7368727 (2008-05-01), Ward
patent: 2002/0134949 (2002-09-01), Gerlach et al.
patent: 2002/0144892 (2002-10-01), Lee et al.
patent: 2002/0170675 (2002-11-01), Libby et al.
patent: 2003/0047691 (2003-03-01), Musil et al.
patent: 2003/0062487 (2003-04-01), Hiroi et al.
patent: 2003/0174879 (2003-09-01), Chen
patent: 2004/0031936 (2004-02-01), Oi et al.
patent: 2004/0121069 (2004-06-01), Ferranti et al.
patent: 2005/0045821 (2005-03-01), Noji et al.
patent: 2006/0060777 (2006-03-01), Motoi et al.
patent: 2006/0097166 (2006-05-01), Ishitani et al.
patent: 2006/0197017 (2006-09-01), Motoi et al.
patent: 2007/0025907 (2007-02-01), Rezeq et al.
patent: 2007/0051900 (2007-03-01), Ward
patent: 2007/0138388 (2007-06-01), Ward et al.
patent: 2007/0158556 (2007-07-01), Ward et al.
patent: 2007/0158581 (2007-07-01), Ward et al.
patent: 2008/0067408 (2008-03-01), Winkler
patent: 2008/0217555 (2008-09-01), Ward et al.
patent: 197 15 226 (1998-10-01), None
patent: 197 44 126 (1999-04-01), None
patent: 0 317 952 (1989-05-01), None
patent: 0 427 532 (1991-05-01), None
patent: 0 477 992 (1992-04-01), None
patent: 1 491 654 (2004-12-01), None
patent: 1 655 265 (2006-05-01), None
patent: 2244257 (1975-04-01), None
patent: 1 604 898 (1981-12-01), None
patent: 5209844 (1983-12-01), None
patent: 62 051134 (1987-03-01), None
patent: 63 040241 (1988-02-01), None
patent: 63 045740 (1988-02-01), None
patent: 63 200434 (1988-08-01), None
patent: 1-130450 (1989-05-01), None
patent: 02 087440 (1990-03-01), None
patent: 04 341734 (1992-11-01), None
patent: 04 341743 (1992-11-01), None
patent: 5275050 (1993-10-01), None
patent: 07045230 (1995-02-01), None
patent: 2789610 (1995-08-01), None
patent: 2001 176440 (2001-06-01), None
patent: 02 025488 (2002-01-01), None
patent: 2003 302579 (2003-10-01), None
patent: 98/47172 (1998-10-01), None
patent: 01/04611 (2001-01-01), None
patent: WO 2004/015496 (2004-02-01), None
patent: 2004/068538 (2004-08-01), None
patent: 2006/133241 (2006-12-01), None
Bernatskii and Pavlov, “Field Desorption of a Potassium-Gold Film on Tungsten,” Physics of the Solid State, 46(8):1538-1541, 2004.
Boerret et al., “Long time current stability of a gas filed ion source with a supertip,” J. Phys. D. Appl. Phys. 21(12):1835-1837, 1988.
Giannuzzi and Stevie,Introduction to Focused Ion Beams—Instrumentation, Theory, Tehcniques and Practice, Nov. 2004, Springer, XP002442742, Chapter 3, see especially p. 56, second section.
Giannuzzi and Stevie,Introduction to Focused Ion Beams—Instrumentation, Theory, Techniques and Practice, Nov. 2004, Springer, XP002462691, Chapter 5—Device Edits and Modifications.
Golubev et al., “Field Emission Study of the Growth of Close-Packed and Stepped Surfaces of a Tungsten Single Crystal,” J. Crystal Growth 52:48-52, 1981.
Hiroshima et al., “A focused He+ ion beam with a high angular current density,” Jpn. J. Appl Phys., 31(1)(12B):4492-4495, 1992.
Kuo et al., “Noble Metal/W(111) Single-Atom Tips and Their Field Electron and Ion Emission Characteristics,” Jpn. J. App. Phy., 45(11):8972-8983, 2006.
Kubena et al., “A low magnification focused ion beam system with 8 nm spot size,” J. Vac. Sci. Technol., 9(6):3079-3083, 1991.
Liu and Orloff, “Analytical model of a gas phase filed ionization source,” J. Vac. Sci. Technol. B 23(6):2816-2820, 2005.
Melngailis, “Focused ion beam Lithography”, Nuclear Instr. And Methods in Phys. Res. B80(81):1271-1280, 1993.
Pavlov, “Atomically Sharp<111> Trihedral Angle of a Tungsten Tip,” Physics of a Solid State, 49(8):1579-1582, 2007.
Pavlov, “Field-Desorption Microscopy Study of the Deformation of a Tungsten Tip Subjected to Thermal Treatment in an Electric Field,” Physics of the Solid State, 47(11):2180-2185, 2005.
Pavlov, “Field Desorption Microscopy of the <111> Trihedral Angle of a Reconstructed Tungsten Tip,” Technical Physics, 51(9):1210-1214, 2006.
Pavlov, “Observation of the Drawing out of Needles by Electric Fields,” A translation of JETP Pis'ma v Redaktsiyu of the Academy of Sciences of the USSR, 17(5):177-179, 1973.
Pavlov, “Variations in Shapes of Outgrowths on a Tungsten Tip during Growth in an Electric Field,” Physics of a Solid State, 48(5):969-972, 2006.
Sakai et al., “Contrast mechanisms in scanning ion microscope imaging for metals,” App. Phys. Letters, AIP, vol. 73, No. 5, pp. 611-613, Aug. 3, 1998.
Sakata et al., “Helium field ion source for application in a 100keV focused ion beam system,” J. Vac. Sci. Technol. B 10(6):2842-2845, 1992.
Sendecki and Barwinski, “A scanning field emission microscope,” Meas. Sci. Technol., 6(3):306-309, (1995).
Shrednik et al., “Growth of Tips in the Directions Normal to Close-Packed Faces by Heating in the Presence of an Electric Field,” Phys. Stat. Sol. (a), 23(1):373-381, 1974.
Unger et al., “Probe hole field electron/field ion microscopy and energy spectroscopy of ultrasharp [111]-oriented tungsten tips,” Applied Surface Science 87(88):45-52, 1995.
Vlasov et al., “High-temperature filed evaporation of thermofield microscopic protuberances,” Sov. Tech. Phys. Lett. 12(5):224-225, 1986.
Ward et al., “Focused Ion Beam Induced Optical Emission Spectroscopy,” J. Vac. Sci. Technol. 6(6):2100-2103, 1988.
Nova 600 Nanolab Product Data, Fei Company Data, 2003, XP007903648.
Fink, H.-W., “Mono-atomic tips for scanning tunneling microscopy”, IBM J. Res. Develop. 30: 460-465 (1986).
Fink, H.-W., “Point Source for Ions and Electrons”, Physica Scripta 38: 260-263 (1988).
Binh, V.T., “In situ fabrication and regeneration of mircotips for scanning tunneling microscopy”, J. Microscopy 152(2): 355-361 (1988).
Stocker, W. et al., “Low-energy electron and ion projection microscopy”, Ultramicroscopy 31: 379

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion sources, systems and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion sources, systems and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion sources, systems and methods will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4070972

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.