Ion sources

Details Ion sources Ion sources

2007-11-27

2007-11-27

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S426000, C250S425000, C250S424000, C250S42300F, C313S363100, C315S111810

Reexamination Certificate

active

10857449

ABSTRACT:
The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

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Patent Abstracts of Japan, vol. 016, No. 291 (Jun. 26, 1992) of JP 04 074419A (Fujitsu Ltd.), entitled Manufacture of Semiconductor Device.
Patent Abstracts of Japan, vol. 1998, No. 01 (Jan. 30, 1998) of JP 09 249975 A (Central Glass Co. Ltd.), entitled Gas Cleaning Method of Tungsten or Tungsten Compound Film Forming Device.

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