Ion source, ion implanting device, and manufacturing method...

Details Ion source, ion implanting device, and manufacturing method... Ion source, ion implanting device, and manufacturing method...

2006-12-05

2006-12-05

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S515000

Reexamination Certificate

active

07144794

ABSTRACT:
This ion source includes a chamber having an internal wall surface and an external wall surface, and also includes a cathode, which is provided to be insulated from the chamber, capable of emitting thermal electrons into the chamber, and has a cathode cap protruding into the chamber from an external side of an opening part which is formed to pass through from the external wall surface to the internal wall surface of the chamber and a filament disposed inside the cathode cap, the cathode cap and/or the filament being an alloy containing tungsten (W) as a major component and a predetermined metal element as a minor component.

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