Ion source for reactive ion etching

Details Ion source for reactive ion etching Ion source for reactive ion etching

1979-06-29

1981-03-31

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156662, 204192E, 313359, H05H 500, H01L 21306

Patent

active

042591457

ABSTRACT:
Reactive ion etching of materials is carried out using a low energy ion beam of controlled energy and current density. The ion beam is generated with an ion source using a single extraction grid having multiple apertures to obtain high current densities at low ion energies. A reactive gas such as CF.sub.4 is introduced into the ion source and ionized to form a plasma which acts as the source of ions for the beam. The plasma forms a sheath located adjacent to the single extraction grid such that the ions are extracted from the plasma through the grid apertures and form a low energy ion beam for bombarding the wafers for etching the same. The size of each of the grid apertures is about the same or smaller than the thickness of the plasma sheath adjacent the grid. The ion source is designed to produce an ion current density of about 1 mA/cm.sup.2 at a low ion energy of about 10-100 electron volts. This low energy minimizes etching by physical sputtering and allows the chemical component of reactive ion etching to dominate.

REFERENCES:
patent: 3177654 (1965-04-01), Gradecak
patent: 3361659 (1968-01-01), Bertelsen
patent: 3660715 (1972-05-01), Post
patent: 3969646 (1976-07-01), Reader et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4119881 (1978-10-01), Calderon
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4158589 (1979-06-01), Keller et al.
Vossen et al., ed. Thin Film Processes, Academic Press, New York, N.Y., (1978), pp. 497-553.

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