Ion source element, ion implanter having the same and method...

Details Ion source element, ion implanter having the same and method... Ion source element, ion implanter having the same and method...

2006-09-15

2010-10-12

Berman, Jack I (Department: 2881)

Radiant energy

Ion generation

Field ionization type

C250S427000, C250S492210, C315S111810, C315S111710

Reexamination Certificate

active

07812320

ABSTRACT:
An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

REFERENCES:
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5763890 (1998-06-01), Cloutier et al.
patent: 5821677 (1998-10-01), Benveniste
patent: 7138768 (2006-11-01), Maciejowski et al.
patent: 09-063981 (1997-03-01), None
patent: 2001-160368 (2001-06-01), None
patent: 10-2005-0030007 (2005-03-01), None

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