Ion source chamber of a high energy implanter with a filtering d

Details Ion source chamber of a high energy implanter with a filtering d Ion source chamber of a high energy implanter with a filtering d

1999-05-03

2000-10-10

Nguyen, Kiet T.

Radiant energy

Ion generation

Field ionization type

H01J 3700

Patent

active

061304336

ABSTRACT:
The present invention relates to an ion source chamber of a high energy implanter. The ion source chamber comprises a main chamber for generating ions for ion implantation, a vent-pipe having two open ends, one end of the vent-pipe being connected to the main chamber for releasing air from the main chamber, a releasing valve connected to another end of the vent-pipe for releasing the air in the main chamber when the pressure of the air in the main chamber exceeds a predetermined pressure, and a filtering device installed between the vent-pipe and the releasing valve for filtering impurities contained in the air carried by the vent-pipe so as to prevent the impurities from falling into the releasing valve.

REFERENCES:
patent: 5438205 (1995-08-01), Schroeder

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