Ion source and ion implanter having the same

Details Ion source and ion implanter having the same Ion source and ion implanter having the same

2007-05-22

2007-05-22

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S42300F, C250S427000, C315S111810

Reexamination Certificate

active

11015492

ABSTRACT:
A filament includes a filament rod having an electron-emitting portion, a pair of leads, and a pair of connection portions. The electron-emitting portion is disposed in the arc chamber. The leads extend from the sidewall of the arc chamber to the outside of the arc chamber. The leads are connected to a filament power source. The connecting portions extend from the sidewall of the arc chamber to the inside of the arc chamber. The connection portions are connected between the electron-emitting portion and the leads. The connection portions have an electrical resistance less than that of the electron-emitting portion. Thus, electrons are thermoelectrically emitted into the arc chamber from the electron emission portion rather than the connection portions. An electron emission rate may also be increased. In addition, since the filament has a longer useful life, downtime of an ion implanter including the ion source may be decreased.

REFERENCES:
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English language abstract of Korean Publication No. 980022041.
English language abstract of Korean Publication No. 950007921.

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