Ion source and ion etching process

Details Ion source and ion etching process Ion source and ion etching process

1979-10-22

1981-07-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 204192E, 204298, 250530, 313161, 3132313, 313293, H01L 21306, H01J 1704

Patent

active

042773040

ABSTRACT:
An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magnets located in a position or positions corresponding to a portion of the cathode surrounded by the looped slit or slits and forming a magnetic field having a direction at substantially right angles to the direction of an electric field formed by applying a voltage between the anode and cathode, a gas which is introduced into the vacuum container through an inlet means formed in the vacuum container being made into gas plasma by means of the electric and magnetic fields at right angles to each other, whereby positive ions in the gas plasma will be taken out through the looped slit or slits.

REFERENCES:
Proceedings on the Symposium on Ion Sources and Application Technology, The Institute of Electrical Engineers of Japan, Feb. 14 and 15, 1977, "Development of Magnetron Ion Source," by Kazuyuki Toki, pp. 57-58.

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