Ion source

Details Ion source Ion source

1986-09-26

1987-12-15

Dixon, Harold

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

250423R, 2504923, 3133591, 31511121, 31511171, H01J 724

Patent

active

047135859

ABSTRACT:
An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.

REFERENCES:
patent: 3230418 (1966-01-01), Dandl
patent: 4409520 (1983-10-01), Koike et al.
patent: 4631438 (1986-12-01), Jacquot
patent: 4647818 (1987-03-01), Ham
patent: 4652795 (1987-03-01), Lee et al.
"Energy Anomalies Observed in Ion Beam Produced by RF Sources" by C. J. Cook et al., Rev. Of Sci Inst. vol. 33, No. 6, pp. 649-652, 6/62.
"Microave Ion Source" by Sakudo et al., Rev. of Sci Inst. vol. 48, No. 7, Jul. 1977 pp. 762-766.

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