Ion source

Details Ion source Ion source

1986-10-01

1988-04-19

Fields, Carolyn E.

Radiant energy

Ion generation

Field ionization type

250427, 31511181, H05H 124

Patent

active

047391693

ABSTRACT:
An ion beam for use in fabrication and processing of semiconductors, thin films or the like. For making uniform the radial distribution of an ion beam extracted from the ion source, a plasma chamber is formed by extending a plasma producing chamber in the direction in which microwave energy is introduced. The plasma chamber thus formed is provided with second magnetic means for generating a magnetic field of multicusp geometry.

REFERENCES:
patent: 4233537 (1980-11-01), Limpaecher
patent: 4559477 (1985-12-01), Leung et al.
patent: 4661710 (1987-04-01), Verney et al.

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