Ion source

Radiant energy – Ion generation – Field ionization type

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31511181, H01J 3708

Patent

active

053171616

ABSTRACT:
In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.

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patent: 5049739 (1991-09-01), Okamoto
Journal of Vacuum Science & Technology/Part B; vol. 6, No. 3; May 1988 Munro: Finite Difference Programs for Computing Tolerances For . . . .
Journal of Vacuum Science & Technology/Part A; vol. 8, No. 5; Sep. '90 SZEP et al: Improved Automated Lens Design Design for LMI Sources.
Journal of Vacuum Science & Technology/Part B; vol. 3, No. 1; Jan. '85 Kurihara: A Focused Ion Beam System for Submicron Lithography.

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