Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-22
2008-01-22
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000
Reexamination Certificate
active
07321143
ABSTRACT:
An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
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Kunath Christian
Kurth Eberhard
Fraunhofer-Gesellschaft zur Forderun der Angewandten Forschung E
Le Thao P.
Thomas Kayden Horstemeyer & Risley
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