Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-07-10
1994-09-27
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, 250398, H01J 37317
Patent
active
053509242
ABSTRACT:
A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.
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Microelectronic Engineering; May 1989, Nos. 1-4, Amsterdam, NL W. L. Brown; "Recent Progress in Ion Beam Lithography"; pp. 269-276.
Chalupka Alfred
Stengl Gerhard
Dubno Herbert
Dzierzynski Paul M.
IMS Ionen Mikrofabrikations Systems Gesellschaft m.b.H.
Nguyen Kiet T.
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