Ion-optical imaging system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 37317, H01J 3710

Patent

active

054364604

ABSTRACT:
A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is made up of a preferably accelerating Einzel lens proximal to the mask and an asymmetric accelerating Einzel proximal to the wafer.

REFERENCES:
patent: 3937958 (1976-02-01), Rusch et al.
patent: 4894549 (1990-01-01), Stengl
patent: 4985634 (1991-01-01), Stengl et al.

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