Ion milling to obtain planarization

Details Ion milling to obtain planarization Ion milling to obtain planarization

1990-09-17

1992-02-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156345, 20419234, 20429836, B44C 122, C03C 1500, C03C 2506

Patent

active

050910485

ABSTRACT:
The surface of a semiconductor wafer is planarized by disposing the wafer in a wafer plane and rotating the wafer within the wafer plane wherein the rotation is around an axis perpendicular to the plane. A stream of particles is transported to the surface of the wafer while the wafer is rotating wherein the angle between the stream of particles and the wafer plane is small. The stream of particles mills the surface of the wafer thereby planarizing the surface of the wafer. The angle between the stream of particles and the wafer plane is preferably less than thirty degrees. The particles may be argon ions and may be chemically active particles or physical particles.

REFERENCES:
patent: 3988564 (1976-10-01), Garvin et al.
patent: 4101772 (1978-07-01), Konishi et al.
patent: 4214966 (1980-07-01), Mahoney
patent: 4460434 (1984-07-01), Johnson et al.
patent: 4734152 (1988-03-01), Geis et al.
patent: 4874459 (1989-10-01), Coldren et al.
patent: 4986876 (1991-01-01), Zeto et al.
"Thin Film Processes", edited by John Vossen and Werner Kern, RCA Laboratories, David Sarnoff Research Center, Princeton, N.J., published by Academic Press, 1978, pp. 497-555.

Affiliated with

Also associated with

Rating

Ion milling to obtain planarization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion milling to obtain planarization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion milling to obtain planarization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1890703