Ion milling method

Details Ion milling method Ion milling method

1988-04-07

1989-09-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156648, 156655, 156662, 156345, 20419234, 20419235, 357 17, 357 16, 357 55, 437129, 372 46, 372 50, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048697800

ABSTRACT:
An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.

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J. J. Yang et al., "Surface-Emitting GaAlAs/GaAs Laser with Etched Mirrors", Electronics Letters, Apr. 10, 1986, vol. 22, No. 8, pp. 438-439.

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