Ion implanting system

Details Ion implanting system Ion implanting system

1988-04-14

1990-02-27

LaRoche, Eugene R.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

2504922, H01J 724, H05B 3126, G21K 2702

Patent

active

049049020

ABSTRACT:
In an ion implanting apparatus, a first conductor member for monitoring the charge-up of the workpiece is positioned on the front face of a wafer disk, a second conductor member electrically connected with the first conductor member for distributing the charge on the first conductor member is positioned on the rear face of the wafer disk, and a third conductor capable of forming capacitive coupling with the second conductor member is fixed to a disk chamber. When the first conductor member is charged, the charge is distributed also to the second conductor member. When the second conductor member passes by the third conductor member by the rotation of the disk, charge is induced on the third conductor member depending on the charged state of the second conductor member. The first, the second and the third conductor members can be effectively shielded from the surroundings. Charge detection with a high S/N ratio is made possible.

REFERENCES:
patent: 4675530 (1987-06-01), Rose et al.
patent: 4775796 (1988-10-01), Purser et al.

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