Ion implanting apparatus capable of preventing discharge flaw pr

Details Ion implanting apparatus capable of preventing discharge flaw pr Ion implanting apparatus capable of preventing discharge flaw pr

1997-03-27

1999-08-31

Anderson, Bruce

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250358, H01J 37317

Patent

active

059456817

ABSTRACT:
An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

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