Ion implanting apparatus capable of preventing discharge flaw pr

Details Ion implanting apparatus capable of preventing discharge flaw pr Ion implanting apparatus capable of preventing discharge flaw pr

1999-05-19

2000-08-15

Anderson, Bruce C.

Radiant energy

Electrically neutral molecular or atomic beam devices and...

2504431, 25049221, H01J 3730

Patent

active

061040258

ABSTRACT:
An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

REFERENCES:
patent: 3507709 (1970-04-01), Bower
patent: 3798495 (1974-03-01), Hergenrother et al.
patent: 4361762 (1982-11-01), Douglas
patent: 5089710 (1992-02-01), Kikuchi et al.
patent: 5286978 (1994-02-01), Yoshida et al.
patent: 5293508 (1994-03-01), Shiratake
patent: 5435379 (1995-07-01), Moslehi et al.
patent: 5466929 (1995-11-01), Sakai et al.
patent: 5576538 (1996-11-01), Sakai et al.
patent: 5668368 (1997-09-01), Sakai et al.
patent: 5753923 (1998-05-01), Mera et al.

Affiliated with

Also associated with

Rating

Ion implanting apparatus capable of preventing discharge flaw pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanting apparatus capable of preventing discharge flaw pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanting apparatus capable of preventing discharge flaw pr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2009287