Ion implanting apparatus and ion implanting method using the...

Details Ion implanting apparatus and ion implanting method using the... Ion implanting apparatus and ion implanting method using the...

2006-09-26

2006-09-26

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000

Reexamination Certificate

active

07112810

ABSTRACT:
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

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patent: 03-095846 (1991-04-01), None
patent: 2002-0534772 (2002-10-01), None
patent: 2001-0048314 (2001-06-01), None

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