Ion implanting apparatus and ion implanting method using the...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S397000

Reexamination Certificate

active

07112810

ABSTRACT:
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

REFERENCES:
patent: 4904902 (1990-02-01), Tamai et al.
patent: 5329129 (1994-07-01), Shono et al.
patent: 6462552 (2002-10-01), Suzuki
patent: 6601163 (2003-07-01), Cromer et al.
patent: 03-095846 (1991-04-01), None
patent: 2002-0534772 (2002-10-01), None
patent: 2001-0048314 (2001-06-01), None

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