Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-01-02
2010-10-05
Nguyen, Kiet T (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000
Reexamination Certificate
active
07807984
ABSTRACT:
Components in an ion implanter that may see incidence of the ion beam include a chamber having an elongate slot opening defined by edges so that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.
REFERENCES:
patent: 4560879 (1985-12-01), Wu et al.
patent: 4587432 (1986-05-01), Aitken
patent: 4754200 (1988-06-01), Plumb et al.
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5134299 (1992-07-01), Denholm
patent: 6956223 (2005-10-01), Smick et al.
patent: 7394073 (2008-07-01), Cummings et al.
patent: 2007/0102652 (2007-05-01), Ring et al.
patent: 2008/0017811 (2008-01-01), Collart et al.
patent: 2008/0164427 (2008-07-01), Collart et al.
patent: 0237906 (2002-05-01), None
patent: 2007065896 (2007-06-01), None
J. Opitz-Coutureau et al., “Biber—The Berlin Ion Beam Exposure and Research Facility” inProceedings of RADECS 2003: Radiation and Its Effects on Components and Systems, Noordwijk, Netherlands, Sep. 15-19, 2003.
Alcott Gregory Robert
Castle Matthew
Hilkene Martin
Murrell Adrian
Applied Materials Inc.
Boult Wade Tennant Dykema Gossett, PLLC
Nguyen Kiet T
LandOfFree
Ion implanters does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implanters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanters will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4168090