Ion implanters

Details Ion implanters Ion implanters

2011-04-19

2011-04-19

Johnston, Phillip A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492230

Reexamination Certificate

active

07928413

ABSTRACT:
The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.

REFERENCES:
patent: 4754200 (1988-06-01), Plumb et al.
patent: 4914305 (1990-04-01), Benveniste et al.
patent: 5432352 (1995-07-01), van Bavel
patent: 5747936 (1998-05-01), Harrison et al.
patent: 6489622 (2002-12-01), Chen et al.
patent: 7326941 (2008-02-01), Chen et al.
patent: 7547899 (2009-06-01), Vanderpot et al.
patent: 0104818 (1984-04-01), None
patent: 7211497 (1995-08-01), None
English Abstract of JP 7211497.

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