Ion implanter with variable scan frequency

Details Ion implanter with variable scan frequency Ion implanter with variable scan frequency

2008-04-15

2008-04-15

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300, C250S398000, C250S3960ML

Reexamination Certificate

active

11390518

ABSTRACT:
An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.

REFERENCES:
patent: 5418378 (1995-05-01), Friede et al.
patent: 6075249 (2000-06-01), Olson
patent: 6495840 (2002-12-01), Hamamoto et al.
patent: 6838685 (2005-01-01), Kodama et al.
patent: 2002/0066872 (2002-06-01), Nishihashi et al.
patent: WO 02/025692 (2002-03-01), None

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