Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-02-28
2006-02-28
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492210, C250S397000
Reexamination Certificate
active
07005656
ABSTRACT:
An ion implanter has an elongated evacuated chamber having a distal end along the path of travel of an ion beam. A planar multilayer printed circuit board (PCB) is located at the distal end of the chamber. The PCB has a first portion sealingly covering the distal end of the chamber and a second portion that extends outside the evacuated chamber, for example in the upward direction. An array of Faraday cups are arranged on a proximal surface of the first portion of the PCB within the chamber, and one or more multi-contact connectors (such as D-type connectors) are located on the second portion of the PCB outside the chamber. The individual contacts of the connector(s) are connected to respective Faraday cups by circuit traces of the PCB.
REFERENCES:
patent: 4724324 (1988-02-01), Liebert
patent: 5103161 (1992-04-01), Bogaty
patent: 5198676 (1993-03-01), Benveniste et al.
patent: 6847036 (2005-01-01), Darling et al.
patent: 2003/0191899 (2003-10-01), Evans
Fiorito Michael
Schaefer Thomas
Sud Rajen
Lee John R.
Varian Semiconductor Equipment Associates Inc.
Yantomo Jennifer
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