Ion implanter for implanting ion on wafer with low contamination

Details Ion implanter for implanting ion on wafer with low contamination Ion implanter for implanting ion on wafer with low contamination

1997-07-01

1999-08-03

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044211, H01J 37317

Patent

active

059328835

ABSTRACT:
In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.

REFERENCES:
patent: 4794305 (1988-12-01), Matsukawa
patent: 5040484 (1991-08-01), Mears et al.
patent: 5084624 (1992-01-01), Lamure et al.
patent: 5440132 (1995-08-01), Joyner et al.

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