Ion implanter and method of manufacturing semiconductor device

Details Ion implanter and method of manufacturing semiconductor device Ion implanter and method of manufacturing semiconductor device

2007-07-24

2007-07-24

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492220, C250S492200, C250S492300, C250S492100, C250S491100

Reexamination Certificate

active

11170171

ABSTRACT:
An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

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Yoneda et al., “The Drain Current Asymmetry of 130 nm MOSFET's due to Extension Implant Shadowing Originated by Mechanical Angle Error in High Current Implanter,” Extended Abstracts of International Workshop on Junction Technology (2002), pp. 19-22.

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